Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suf...

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Detalles Bibliográficos
Autores principales: Haziq, Muhaimin, Falina, Shaili, Manaf, Asrulnizam Abd, Kawarada, Hiroshi, Syamsul, Mohd
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9785762/
https://www.ncbi.nlm.nih.gov/pubmed/36557432
http://dx.doi.org/10.3390/mi13122133

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9785762/
https://www.ncbi.nlm.nih.gov/pubmed/36557432
http://dx.doi.org/10.3390/mi13122133

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