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Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suf...

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Detalles Bibliográficos
Autores principales:	Haziq, Muhaimin, Falina, Shaili, Manaf, Asrulnizam Abd, Kawarada, Hiroshi, Syamsul, Mohd
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Review
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9785762/ https://www.ncbi.nlm.nih.gov/pubmed/36557432 http://dx.doi.org/10.3390/mi13122133

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