Integrating a Soft Body Diode in the Super-Junction MOSFET by Using an n(−)/n(+)-Buffer Layer

In this paper, a novel silicon super-junction (SJ) MOSFET embedded with a soft reverse recovery body diode is proposed and studied by numerical simulation. The device introduces an n(+)-buffer layer between the n(−)-buffer layer and the n(+)-substrate to improve the reverse recovery behaviour of its...

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Detalles Bibliográficos
Autores principales: Lin, Zhi, Zeng, Wei, Wang, Da, Li, Ping, Hu, Shengdong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9785764/
https://www.ncbi.nlm.nih.gov/pubmed/36557492
http://dx.doi.org/10.3390/mi13122193

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9785764/
https://www.ncbi.nlm.nih.gov/pubmed/36557492
http://dx.doi.org/10.3390/mi13122193

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