The Limit Tuning Effects Exerted by the Mechanically Induced Artificial Potential Barriers on the I–V Characteristics of Piezoelectric PN Junctions

A mechanically induced artificial potential barrier (MIAPB) in piezoelectric semiconductor devices is set up under the action of a pair of tensile/compressive mechanical loadings. Three factors, namely, the barrier height, width and position, affect the nature and extent of interaction between the M...

Descripción completa

Detalles Bibliográficos
Autores principales: Yang, Yizhan, Chen, Jiankang, Wang, Yunbo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9785982/
https://www.ncbi.nlm.nih.gov/pubmed/36557402
http://dx.doi.org/10.3390/mi13122103

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9785982/
https://www.ncbi.nlm.nih.gov/pubmed/36557402
http://dx.doi.org/10.3390/mi13122103

Ejemplares similares