The Limit Tuning Effects Exerted by the Mechanically Induced Artificial Potential Barriers on the I–V Characteristics of Piezoelectric PN Junctions

A mechanically induced artificial potential barrier (MIAPB) in piezoelectric semiconductor devices is set up under the action of a pair of tensile/compressive mechanical loadings. Three factors, namely, the barrier height, width and position, affect the nature and extent of interaction between the MIAPB and the contact barrier, and the tuning characteristics (generated under conditions of the artificial barrier) of the piezoelectric PN junctions were studied. The influence of these factors resulted in variations in the interaction intensities, superposition effects, carrier inversion degrees and carrier redistribution ranges. Subsequently, the limit tuning effects exerted by the tensile/compressive-mode MIAPB on the PN junctions were studied. The inconsistency between the left and right end of the tensile-mode MIAPB under conditions of the offset loading state proves that the maximum tuning effect is generated when both sides of the interface are symmetrically loaded. The range of carrier redistribution and the over-inversion of local carriers, affected by the width and height of MIAPB, result in a second competitive mechanism. The carrier redistribution range and the carrier inversion degree require that the compressive-mode MIAPB be sufficiently wide. The interaction intensities and the superposition effects, affected by the position and height of the MIAPB, contribute to the second competing mechanism. We logically clarify the relationship between multiple competition and find that the emergence of multiple competitive mechanisms proves the existence of the limit tuning effect of MIAPB on the I–V properties of PN junctions. The results reported herein provide a platform for understanding the mechanical tuning laws governing the functions of piezoelectric PN junctions and piezoelectric devices.