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Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlO(x) Thin Layer
ITO/WO(x)/TaN and ITO/WO(x)/AlO(x)/TaN memory cells were fabricated as a neuromorphic device that is compatible with CMOS. They are suitable for the information age, which requires a large amount of data as next-generation memory. The device with a thin AlO(x) layer deposited by atomic layer deposit...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9786020/ https://www.ncbi.nlm.nih.gov/pubmed/36556886 http://dx.doi.org/10.3390/ma15249081 |