An Activated Bismuth Layer Formed In Situ on a Solid Bismuth Microelectrode for Electrochemical Sensitive Determination of Ga(III)

In this paper, an activated bismuth layer formed in situ on a solid bismuth microelectrode, used as a working electrode for the electrochemical sensitive determination of Ga(III), based on anodic stripping voltammetry (ASV) is discussed. The new electrode significantly enhances the sensitivity in th...

Descripción completa

Detalles Bibliográficos
Autores principales: Grabarczyk, Malgorzata, Wlazlowska, Edyta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9787325/
https://www.ncbi.nlm.nih.gov/pubmed/36557174
http://dx.doi.org/10.3390/membranes12121267

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9787325/
https://www.ncbi.nlm.nih.gov/pubmed/36557174
http://dx.doi.org/10.3390/membranes12121267

Ejemplares similares