Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Properties

Nanocrystals of Si doped with S, Se and Te were synthesized by annealing them in chalcogen vapors in a vacuum at a high temperature range from 800 to 850 °C. The influence of the dopant on the structure and morphology of the particles and their optical and electrical properties was studied. In the c...

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Detalles Bibliográficos
Autores principales: Vinokurov, Alexander, Popelensky, Vadim, Bubenov, Sergei, Kononov, Nikolay, Cherednichenko, Kirill, Kuznetsova, Tatyana, Dorofeev, Sergey
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9787536/
https://www.ncbi.nlm.nih.gov/pubmed/36556648
http://dx.doi.org/10.3390/ma15248842

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9787536/
https://www.ncbi.nlm.nih.gov/pubmed/36556648
http://dx.doi.org/10.3390/ma15248842

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