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Recrystallization of Si Nanoparticles in Presence of Chalcogens: Improved Electrical and Optical Properties
Nanocrystals of Si doped with S, Se and Te were synthesized by annealing them in chalcogen vapors in a vacuum at a high temperature range from 800 to 850 °C. The influence of the dopant on the structure and morphology of the particles and their optical and electrical properties was studied. In the c...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9787536/ https://www.ncbi.nlm.nih.gov/pubmed/36556648 http://dx.doi.org/10.3390/ma15248842 |