Forming-Free Tunable Analog Switching in WO(x)/TaO(x) Heterojunction for Emulating Electronic Synapses

In this work, the sputtered deposited WO(x)/TaO(x) switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without an electroforming process. The memrist...

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Detalles Bibliográficos
Autores principales: Mahata, Chandreswar, Pyo, Juyeong, Jeon, Beomki, Ismail, Muhammad, Kang, Myounggon, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9787645/
https://www.ncbi.nlm.nih.gov/pubmed/36556662
http://dx.doi.org/10.3390/ma15248858

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9787645/
https://www.ncbi.nlm.nih.gov/pubmed/36556662
http://dx.doi.org/10.3390/ma15248858

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