Critical Effect of Oxygen Pressure in Pulsed Laser Deposition for Room Temperature and High Performance Amorphous In-Ga-Zn-O Thin Film Transistors

The aspects of low processing temperature and easy running in oxygen atmosphere contribute to the potential of pulsed laser deposition (PLD) in developing a-IGZO TFTs for flexible applications. However, the realization of low-temperature and high-performance devices with determined strategies requir...

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Detalles Bibliográficos
Autores principales: Zhou, Yue, Wang, Dao, Li, Yushan, Jing, Lixin, Li, Shuangjie, Chen, Xiaodan, Zhang, Beijing, Shuai, Wentao, Tao, Ruiqiang, Lu, Xubing, Liu, Junming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9787761/
https://www.ncbi.nlm.nih.gov/pubmed/36558211
http://dx.doi.org/10.3390/nano12244358

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9787761/
https://www.ncbi.nlm.nih.gov/pubmed/36558211
http://dx.doi.org/10.3390/nano12244358

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