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Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection

Amorphous InGaZnO thin film transistors (a-IGZO TFTs) with double-stacked channel layers (DSCL) were quite fit for ultraviolet (UV) light detection, where the best DSCL was prepared by the depositions of oxygen-rich (OR) IGZO followed by the oxygen-deficient (OD) IGZO films. We investigated the infl...

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Detalles Bibliográficos
Autores principales: Fan, Zenghui, Shen, Ao, Xia, Yong, Dong, Chengyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9788531/
https://www.ncbi.nlm.nih.gov/pubmed/36557398
http://dx.doi.org/10.3390/mi13122099