Regulating the Electronic Structure of Freestanding Graphene on SiC by Ge/Sn Intercalation: A Theoretical Study

The intrinsic n-type of epitaxial graphene on SiC substrate limits its applications in microelectronic devices, and it is thus vital to modulate and achieve p-type and charge-neutral graphene. The main groups of metal intercalations, such as Ge and Sn, are found to be excellent candidates to achieve...

Descripción completa

Detalles Bibliográficos
Autores principales: Luo, Xingyun, Liang, Guojun, Li, Yanlu, Yu, Fapeng, Zhao, Xian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9788586/
https://www.ncbi.nlm.nih.gov/pubmed/36558135
http://dx.doi.org/10.3390/molecules27249004

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9788586/
https://www.ncbi.nlm.nih.gov/pubmed/36558135
http://dx.doi.org/10.3390/molecules27249004

Ejemplares similares