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Optimization of Processing Parameters and Adhesive Properties of Aluminum Oxide Thin-Film Transition Layer for Aluminum Substrate Thin-Film Sensor
A thin-film strain micro-sensor is a cutting force sensor that can be integrated with tools. Its elastic substrate is an important intermediate to transfer the strain generated by the tools during cutting to the resistance-grid-sensitive layer. In this paper, 1060 aluminum is selected as the elastic...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9788627/ https://www.ncbi.nlm.nih.gov/pubmed/36557414 http://dx.doi.org/10.3390/mi13122115 |
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author | Zhao, Yongjuan Wu, Wenge Cheng, Yunping Yan, Wentao |
author_facet | Zhao, Yongjuan Wu, Wenge Cheng, Yunping Yan, Wentao |
author_sort | Zhao, Yongjuan |
collection | PubMed |
description | A thin-film strain micro-sensor is a cutting force sensor that can be integrated with tools. Its elastic substrate is an important intermediate to transfer the strain generated by the tools during cutting to the resistance-grid-sensitive layer. In this paper, 1060 aluminum is selected as the elastic substrate material and aluminum oxide thin film is selected as the transition layer between the aluminum substrate and the silicon nitride insulating layer. The Stoney correction formula applicable to the residual stress of the aluminum oxide film is derived, and the residual stress of the aluminum oxide film on the aluminum substrate is obtained. The influence of Sputtering pressure, argon flow and negative substrate bias process parameters on the surface quality and sputtering power of the aluminum oxide thin film is discussed. The relationship model between process parameters, surface roughness, and sputtering rate of thin films is established. The sputtering process parameters for preparing an aluminum oxide thin film are optimized. The micro-surface quality of the aluminum oxide thin film obtained before and after the optimization of the process parameters and the surface quality of Si(3)N(4) thin film sputtered on alumina thin film before and after the optimization are compared. It is verified that the optimized process parameters of aluminum oxide film as a transition layer can improve the adhesion between the insulating-layer silicon nitride film and the aluminum substrate. |
format | Online Article Text |
id | pubmed-9788627 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-97886272022-12-24 Optimization of Processing Parameters and Adhesive Properties of Aluminum Oxide Thin-Film Transition Layer for Aluminum Substrate Thin-Film Sensor Zhao, Yongjuan Wu, Wenge Cheng, Yunping Yan, Wentao Micromachines (Basel) Article A thin-film strain micro-sensor is a cutting force sensor that can be integrated with tools. Its elastic substrate is an important intermediate to transfer the strain generated by the tools during cutting to the resistance-grid-sensitive layer. In this paper, 1060 aluminum is selected as the elastic substrate material and aluminum oxide thin film is selected as the transition layer between the aluminum substrate and the silicon nitride insulating layer. The Stoney correction formula applicable to the residual stress of the aluminum oxide film is derived, and the residual stress of the aluminum oxide film on the aluminum substrate is obtained. The influence of Sputtering pressure, argon flow and negative substrate bias process parameters on the surface quality and sputtering power of the aluminum oxide thin film is discussed. The relationship model between process parameters, surface roughness, and sputtering rate of thin films is established. The sputtering process parameters for preparing an aluminum oxide thin film are optimized. The micro-surface quality of the aluminum oxide thin film obtained before and after the optimization of the process parameters and the surface quality of Si(3)N(4) thin film sputtered on alumina thin film before and after the optimization are compared. It is verified that the optimized process parameters of aluminum oxide film as a transition layer can improve the adhesion between the insulating-layer silicon nitride film and the aluminum substrate. MDPI 2022-11-30 /pmc/articles/PMC9788627/ /pubmed/36557414 http://dx.doi.org/10.3390/mi13122115 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Zhao, Yongjuan Wu, Wenge Cheng, Yunping Yan, Wentao Optimization of Processing Parameters and Adhesive Properties of Aluminum Oxide Thin-Film Transition Layer for Aluminum Substrate Thin-Film Sensor |
title | Optimization of Processing Parameters and Adhesive Properties of Aluminum Oxide Thin-Film Transition Layer for Aluminum Substrate Thin-Film Sensor |
title_full | Optimization of Processing Parameters and Adhesive Properties of Aluminum Oxide Thin-Film Transition Layer for Aluminum Substrate Thin-Film Sensor |
title_fullStr | Optimization of Processing Parameters and Adhesive Properties of Aluminum Oxide Thin-Film Transition Layer for Aluminum Substrate Thin-Film Sensor |
title_full_unstemmed | Optimization of Processing Parameters and Adhesive Properties of Aluminum Oxide Thin-Film Transition Layer for Aluminum Substrate Thin-Film Sensor |
title_short | Optimization of Processing Parameters and Adhesive Properties of Aluminum Oxide Thin-Film Transition Layer for Aluminum Substrate Thin-Film Sensor |
title_sort | optimization of processing parameters and adhesive properties of aluminum oxide thin-film transition layer for aluminum substrate thin-film sensor |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9788627/ https://www.ncbi.nlm.nih.gov/pubmed/36557414 http://dx.doi.org/10.3390/mi13122115 |
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