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Double Gate 6H-Silicon Carbide Schottky Barrier FET as Dielectrically Modulated Label Free Biosensor

This article presents a novel structure for efficient label free biosensing applications. The proposed device comprises of 6H-Silicon Carbide based double gate Schottky Barrier FET with two cavities to detect the biomolecules. Using Atlas TCAD simulations, it has been verified that the proposed devi...

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Detalles Bibliográficos
Autores principales: Rashid, Shazia, Bashir, Faisal, Khanday, Farooq A., Beigh, M. Rafiq
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Netherlands 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9788864/
http://dx.doi.org/10.1007/s12633-022-02273-7