Cargando…
Double Gate 6H-Silicon Carbide Schottky Barrier FET as Dielectrically Modulated Label Free Biosensor
This article presents a novel structure for efficient label free biosensing applications. The proposed device comprises of 6H-Silicon Carbide based double gate Schottky Barrier FET with two cavities to detect the biomolecules. Using Atlas TCAD simulations, it has been verified that the proposed devi...
Autores principales: | Rashid, Shazia, Bashir, Faisal, Khanday, Farooq A., Beigh, M. Rafiq |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer Netherlands
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9788864/ http://dx.doi.org/10.1007/s12633-022-02273-7 |
Ejemplares similares
-
Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor
por: Esakki, Papanasam, et al.
Publicado: (2023) -
Materials and Processes for Schottky Contacts on Silicon Carbide
por: Vivona, Marilena, et al.
Publicado: (2021) -
A detailed investigation of dielectric-modulated dual-gate TMD FET based label-free biosensor via analytical modelling
por: Kumari, Monika, et al.
Publicado: (2022) -
Sensitivity Enhancement of Dual Gate FET Based Biosensor Using Modulated Dielectric for Covid Detection
por: Kumar, Saurabh, et al.
Publicado: (2022) -
Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes
por: Nicholls, Jordan, et al.
Publicado: (2019)