Cargando…
Fabrication of wafer-scale nanoporous AlGaN-based deep ultraviolet distributed Bragg reflectors via one-step selective wet etching
In this paper, we reported on wafer-scale nanoporous (NP) AlGaN-based deep ultraviolet (DUV) distributed Bragg reflectors (DBRs) with 95% reflectivity at 280 nm, using epitaxial periodically stacked n-Al(0.62)Ga(0.38)N/u-Al(0.62)Ga(0.38)N structures grown on AlN/sapphire templates via metal–organic...
Autores principales: | Zhao, Yongming, Shan, Maocheng, Zheng, Zhihua, Jian, Pengcheng, Liu, WeiJie, Tan, Shizhou, Chen, Changqing, Wu, Feng, Dai, Jiangnan |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9794686/ https://www.ncbi.nlm.nih.gov/pubmed/36575216 http://dx.doi.org/10.1038/s41598-022-25712-2 |
Ejemplares similares
-
Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors
por: Griffin, Peter, et al.
Publicado: (2018) -
Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors
por: Lu, Xingdong, et al.
Publicado: (2019) -
Ultraviolet-C
AlGaN Resonant-Cavity Light-Emitting
Diodes with Thermal Stability Pipe-AlGaN-Distributed Bragg Reflectors
por: Chen, Kuei-Ting, et al.
Publicado: (2023) -
Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
por: Fan, Feng-Hsu, et al.
Publicado: (2017) -
Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer
por: Hu, Jiahui, et al.
Publicado: (2019)