Ferroelectric-Antiferroelectric Transition of Hf(1–x)Zr(x)O(2) on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf(0.2)Zr(0.8)O(2)

[Image: see text] The ferroelectric (FE)–antiferroelectric (AFE) transition in Hf(1–x)Zr(x)O(2) (HZO) is for the first time shown in a metal–ferroelectric–semiconductor (MFS) stack based on the III-V material InAs. As InAs displays excellent electron mobility and a narrow band gap, the integration o...

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Detalles Bibliográficos
Autores principales: Dahlberg, Hannes, Persson, Anton E. O., Athle, Robin, Wernersson, Lars-Erik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9798826/
https://www.ncbi.nlm.nih.gov/pubmed/36588621
http://dx.doi.org/10.1021/acsaelm.2c01483

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9798826/
https://www.ncbi.nlm.nih.gov/pubmed/36588621
http://dx.doi.org/10.1021/acsaelm.2c01483

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