Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor

Two-dimensional (2D) van-der-Waals (vdW) layered ferroelectric semiconductors are highly desired for in-memory computing and ferroelectric photovoltaics or detectors. Beneficial from the weak interlayer vdW-force, controlling the structure by interlayer twist/translation or doping is an effective st...

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Detalles Bibliográficos
Autores principales: Sui, Fengrui, Jin, Min, Zhang, Yuanyuan, Qi, Ruijuan, Wu, Yu-Ning, Huang, Rong, Yue, Fangyu, Chu, Junhao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9810696/
https://www.ncbi.nlm.nih.gov/pubmed/36596789
http://dx.doi.org/10.1038/s41467-022-35490-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9810696/
https://www.ncbi.nlm.nih.gov/pubmed/36596789
http://dx.doi.org/10.1038/s41467-022-35490-0

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