Effect of Si(111) Surface Modification by Ga Focused Ion Beam at 30 kV on GaAs Nanowire Growth

This paper presents the results of experimental studies of the effect of Si(111) surface modification by Ga-focused ion beam (FIB) at 30 kV accelerating voltage on the features of the epitaxial GaAs nanowire (NW) growth processes. We experimentally established the regularities of the Ga ions’ dose e...

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Detalles Bibliográficos
Autores principales: Shandyba, Nikita, Balakirev, Sergey, Sharov, Vladislav, Chernenko, Natalia, Kirichenko, Danil, Solodovnik, Maxim
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9820241/
https://www.ncbi.nlm.nih.gov/pubmed/36613671
http://dx.doi.org/10.3390/ijms24010224

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9820241/
https://www.ncbi.nlm.nih.gov/pubmed/36613671
http://dx.doi.org/10.3390/ijms24010224

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