Synthesis, Structural and Magnetic Properties of Cobalt-Doped GaN Nanowires on Si by Atmospheric Pressure Chemical Vapor Deposition

GaN nanowires (NWs) grown on silicon via atmospheric pressure chemical vapor deposition were doped with Cobalt (Co) by ion implantation, with a high dose concentration of 4 × 10(16) cm(−2), corresponding to an average atomic percentage of ~3.85%, and annealed after the implantation. Co-doped GaN sho...

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Detalles Bibliográficos
Autores principales: Feng, Zhe Chuan, Liu, Yu-Lun, Yiin, Jeffrey, Chen, Li-Chyong, Chen, Kuei-Hsien, Klein, Benjamin, Ferguson, Ian T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9821199/
https://www.ncbi.nlm.nih.gov/pubmed/36614436
http://dx.doi.org/10.3390/ma16010097

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9821199/
https://www.ncbi.nlm.nih.gov/pubmed/36614436
http://dx.doi.org/10.3390/ma16010097

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