Correlations between Microstructure and Residual Stress of Nanoscale Depth Profiles for TSV-Cu/TiW/SiO(2)/Si Interfaces after Different Thermal Loading

In this paper, the residual stresses with a nanoscale depth resolution at TSV-Cu/TiW/SiO(2)/Si interfaces under different thermal loadings are characterized using the ion-beam layer removal (ILR) method. Moreover, the correlations of residual stress, microstructure, and the failure modes of the inte...

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Detalles Bibliográficos
Autores principales: Zhang, Min, Chen, Fangzhou, Qin, Fei, Chen, Si, Dai, Yanwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9821935/
https://www.ncbi.nlm.nih.gov/pubmed/36614786
http://dx.doi.org/10.3390/ma16010449

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9821935/
https://www.ncbi.nlm.nih.gov/pubmed/36614786
http://dx.doi.org/10.3390/ma16010449

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