Correlations between Microstructure and Residual Stress of Nanoscale Depth Profiles for TSV-Cu/TiW/SiO(2)/Si Interfaces after Different Thermal Loading

In this paper, the residual stresses with a nanoscale depth resolution at TSV-Cu/TiW/SiO(2)/Si interfaces under different thermal loadings are characterized using the ion-beam layer removal (ILR) method. Moreover, the correlations of residual stress, microstructure, and the failure modes of the interfaces are discussed. The residual stresses at the interfaces of TSV-Cu/TiW, TiW/SiO(2), and SiO(2)/Si are in the form of small compressive stress at room temperature, then turn into high-tensile stress after thermal cycling or annealing. In addition, the maximum residual stress inside the TSV-Cu is 478.54 MPa at room temperature, then decreases to 216.75 MPa and 90.45 MPa, respectively, after thermal cycling and annealing. The microstructural analysis indicates that thermal cycling causes an increase in the dislocation density and a decrease in the grain diameter of TSV-Cu. Thus, residual stress accumulates constantly in the TSV-Cu/TiW interface, resulting in the cracking of the interface. Furthermore, annealing leads to the cracking of more interfaces, relieving the residual stress as well as increasing the grain diameter of TSV-Cu. Besides this, the applicability of the ILR method is verified by finite element modeling (FEM). The influence of the geometric errors of the micro-cantilever beam and the damage to the materials introduced by the focused ion beam (FIB) in the experimental results are discussed.