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The Effect of Ultrasonic Agitation on the Seedless Growth of Cu on Ru-W Thin Films
Ru attracted considerable attention as a candidate to replace TaN as a diffusion barrier layer for Cu interconnect metallisation. The addition of W improves the diffusion barrier properties of Ru but appears to weaken the adhesion strength between the barrier and Cu and the direct (seedless) electro...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9822143/ https://www.ncbi.nlm.nih.gov/pubmed/36614506 http://dx.doi.org/10.3390/ma16010167 |