A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory

Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of RRAM devices, which exhibit two different resisti...

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Detalles Bibliográficos
Autores principales: Chung, Harry, Shin, Hyungsoon, Park, Jisun, Sun, Wookyung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9822214/
https://www.ncbi.nlm.nih.gov/pubmed/36614520
http://dx.doi.org/10.3390/ma16010182

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9822214/
https://www.ncbi.nlm.nih.gov/pubmed/36614520
http://dx.doi.org/10.3390/ma16010182

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