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A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory
Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of RRAM devices, which exhibit two different resisti...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9822214/ https://www.ncbi.nlm.nih.gov/pubmed/36614520 http://dx.doi.org/10.3390/ma16010182 |