Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO(2)) Devices via Sol-Gel Method Stacking Tri-Layer HfO(2)/Al-ZnO/HfO(2) Structures

Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be...

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Detalles Bibliográficos
Autores principales: Xu, Yuan-Dong, Jiang, Yan-Ping, Tang, Xin-Gui, Liu, Qiu-Xiang, Tang, Zhenhua, Li, Wen-Hua, Guo, Xiao-Bin, Zhou, Yi-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9823911/
https://www.ncbi.nlm.nih.gov/pubmed/36615949
http://dx.doi.org/10.3390/nano13010039

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9823911/
https://www.ncbi.nlm.nih.gov/pubmed/36615949
http://dx.doi.org/10.3390/nano13010039

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