First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices

In the reset state, the decay reaction mechanism and bipolar switching properties of vanadium oxide thin film RRAM devices for LRS/HRS are investigated and discussed here. To discover the properties of I-V switching curves, the first order rate law behaviors of the reset state between the resistant...

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Detalles Bibliográficos
Autores principales: Chen, Kai-Huang, Cheng, Chien-Min, Wang, Na-Fu, Hung, Hsiao-Wen, Li, Cheng-Ying, Wu, Sean
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9824478/
https://www.ncbi.nlm.nih.gov/pubmed/36616108
http://dx.doi.org/10.3390/nano13010198

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9824478/
https://www.ncbi.nlm.nih.gov/pubmed/36616108
http://dx.doi.org/10.3390/nano13010198

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