First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices

In the reset state, the decay reaction mechanism and bipolar switching properties of vanadium oxide thin film RRAM devices for LRS/HRS are investigated and discussed here. To discover the properties of I-V switching curves, the first order rate law behaviors of the reset state between the resistant...

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Autores principales: Chen, Kai-Huang, Cheng, Chien-Min, Wang, Na-Fu, Hung, Hsiao-Wen, Li, Cheng-Ying, Wu, Sean
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9824478/
https://www.ncbi.nlm.nih.gov/pubmed/36616108
http://dx.doi.org/10.3390/nano13010198
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author Chen, Kai-Huang
Cheng, Chien-Min
Wang, Na-Fu
Hung, Hsiao-Wen
Li, Cheng-Ying
Wu, Sean
author_facet Chen, Kai-Huang
Cheng, Chien-Min
Wang, Na-Fu
Hung, Hsiao-Wen
Li, Cheng-Ying
Wu, Sean
author_sort Chen, Kai-Huang
collection PubMed
description In the reset state, the decay reaction mechanism and bipolar switching properties of vanadium oxide thin film RRAM devices for LRS/HRS are investigated and discussed here. To discover the properties of I-V switching curves, the first order rate law behaviors of the reset state between the resistant variety properties and the reaction time were observed. To verify the decay reaction mechanism in the reset state, vanadium oxide thin films from RRAM devices were measured by different constant voltage sampling and exhibited the same decay reaction rate constant. Finally, the electrical conduction transfer mechanism and metallic filament forming model described by I-V switching properties of the RRAM devices were proven and investigated.
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spelling pubmed-98244782023-01-08 First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices Chen, Kai-Huang Cheng, Chien-Min Wang, Na-Fu Hung, Hsiao-Wen Li, Cheng-Ying Wu, Sean Nanomaterials (Basel) Article In the reset state, the decay reaction mechanism and bipolar switching properties of vanadium oxide thin film RRAM devices for LRS/HRS are investigated and discussed here. To discover the properties of I-V switching curves, the first order rate law behaviors of the reset state between the resistant variety properties and the reaction time were observed. To verify the decay reaction mechanism in the reset state, vanadium oxide thin films from RRAM devices were measured by different constant voltage sampling and exhibited the same decay reaction rate constant. Finally, the electrical conduction transfer mechanism and metallic filament forming model described by I-V switching properties of the RRAM devices were proven and investigated. MDPI 2023-01-01 /pmc/articles/PMC9824478/ /pubmed/36616108 http://dx.doi.org/10.3390/nano13010198 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Chen, Kai-Huang
Cheng, Chien-Min
Wang, Na-Fu
Hung, Hsiao-Wen
Li, Cheng-Ying
Wu, Sean
First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices
title First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices
title_full First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices
title_fullStr First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices
title_full_unstemmed First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices
title_short First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices
title_sort first order rate law analysis for reset state in vanadium oxide thin film resistive random access memory devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9824478/
https://www.ncbi.nlm.nih.gov/pubmed/36616108
http://dx.doi.org/10.3390/nano13010198
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