Semiconductor–metal transition in Bi(2)Se(3) caused by impurity doping

Doping a typical topological insulator, Bi(2)Se(3), with Ag impurity causes a semiconductor–metal (S-M) transition at 35 K. To deepen the understanding of this phenomenon, structural and transport properties of Ag-doped Bi(2)Se(3) were studied. Single-crystal X-ray diffraction (SC-XRD) showed no str...

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Detalles Bibliográficos
Autores principales: Uchiyama, Takaki, Goto, Hidenori, Uesugi, Eri, Takai, Akihisa, Zhi, Lei, Miura, Akari, Hamao, Shino, Eguchi, Ritsuko, Ota, Hiromi, Sugimoto, Kunihisa, Fujiwara, Akihiko, Matsui, Fumihiko, Kimura, Koji, Hayashi, Kouichi, Ueno, Teppei, Kobayashi, Kaya, Akimitsu, Jun, Kubozono, Yoshihiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9834400/
https://www.ncbi.nlm.nih.gov/pubmed/36631625
http://dx.doi.org/10.1038/s41598-023-27701-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9834400/
https://www.ncbi.nlm.nih.gov/pubmed/36631625
http://dx.doi.org/10.1038/s41598-023-27701-5

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