ReS(2) on GaN Photodetector Using H(+) Ion-Cut Technology

[Image: see text] The wafer-scale single-crystal GaN film was transferred from a commercial bulk GaN wafer onto a Si (100) substrate by combining ion-cut and surface-activated bonding. Well-defined, uniformly thick, and large-scale wafer size ReS(2) multilayers were grown on the GaN substrate. Final...

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Detalles Bibliográficos
Autores principales: Liu, Xinke, Zhou, Jie, Luo, Jiangliu, Shi, Hangning, You, Tiangui, Ou, Xin, Botcha, Venkatadivakar, Mu, Fengwen, Suga, Tadatomo, Wang, Xinzhong, Huang, Shuangwu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9835174/
https://www.ncbi.nlm.nih.gov/pubmed/36643520
http://dx.doi.org/10.1021/acsomega.2c05049

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9835174/
https://www.ncbi.nlm.nih.gov/pubmed/36643520
http://dx.doi.org/10.1021/acsomega.2c05049

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