ReS(2) on GaN Photodetector Using H(+) Ion-Cut Technology

[Image: see text] The wafer-scale single-crystal GaN film was transferred from a commercial bulk GaN wafer onto a Si (100) substrate by combining ion-cut and surface-activated bonding. Well-defined, uniformly thick, and large-scale wafer size ReS(2) multilayers were grown on the GaN substrate. Finally, ReS(2) photodetectors were fabricated on GaN and sapphire substrates, respectively, and their performances were compared. Due to the polarization effect of GaN, the ReS(2)/GaN photodetector showed better performance. The ReS(2)/GaN photodetector has a responsivity of 40.12 A/W, while ReS(2)/sapphire has a responsivity of 0.17 A/W. In addition, the ReS(2)/GaN photodetector properties have reached an excellent reasonable level, including a photoconductive gain of 447.30, noise-equivalent power of 1.80 × 10(–14) W/Hz(1/2), and detectivity of 1.21 × 10(10) Jones. This study expands the way to enhance the performance of ReS(2) photodetectors.