Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

In this article, the authors have articulated DC as well as transient response of a dielectric modulated gate-engineered heterostructure tunnel field effect transistor (GE-HTFET)-based biosensor for label-free detection. A low (direct) bandgap material, indium arsenide (InAs) has been selectively us...

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Detalles Bibliográficos
Autores principales: Ghosh, Rittik, Karmakar, Ananya, Saha, Priyanka
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Berlin Heidelberg 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9838274/
https://www.ncbi.nlm.nih.gov/pubmed/36683913
http://dx.doi.org/10.1007/s00339-023-06393-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9838274/
https://www.ncbi.nlm.nih.gov/pubmed/36683913
http://dx.doi.org/10.1007/s00339-023-06393-8

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