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Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

In this article, the authors have articulated DC as well as transient response of a dielectric modulated gate-engineered heterostructure tunnel field effect transistor (GE-HTFET)-based biosensor for label-free detection. A low (direct) bandgap material, indium arsenide (InAs) has been selectively us...

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Detalles Bibliográficos
Autores principales:	Ghosh, Rittik, Karmakar, Ananya, Saha, Priyanka
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer Berlin Heidelberg 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9838274/ https://www.ncbi.nlm.nih.gov/pubmed/36683913 http://dx.doi.org/10.1007/s00339-023-06393-8

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