Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration

Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions. The desired characteristic of any SiC model becomes highly important if an individual wants to visualize the imp...

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Detalles Bibliográficos
Autores principales: Khalid, Hassan, Mekhilef, Saad, Siddique, Marif Daula, Wahyudie, Addy, Ahmed, Mahrous, Seyedmahmoudian, Mehdi, Stojcevski, Alex
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2023
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9838867/
https://www.ncbi.nlm.nih.gov/pubmed/36638108
http://dx.doi.org/10.1371/journal.pone.0277331

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9838867/
https://www.ncbi.nlm.nih.gov/pubmed/36638108
http://dx.doi.org/10.1371/journal.pone.0277331

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