Exchange bias coupling and bipolar resistive switching at room temperature on GaSb/Mn multilayers for resistive memories applications

This work present structural, morphological, magnetic, and electrical properties of GaSb/Mn multilayer deposited via DC magnetron sputtering at room temperature and at 423 K. The samples are characterized by forming layers of 3, 6 and 12 periods of the GaSb/Mn structure. Through XRD patterns, it was...

Descripción completa

Detalles Bibliográficos
Autores principales: Calderón, Jorge A., Quiroz, Heiddy P., Terán, Cristian L., Manso-Silván, M., Dussan, A., Muñoz Noval, Álvaro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9839777/
https://www.ncbi.nlm.nih.gov/pubmed/36639693
http://dx.doi.org/10.1038/s41598-022-27371-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9839777/
https://www.ncbi.nlm.nih.gov/pubmed/36639693
http://dx.doi.org/10.1038/s41598-022-27371-9

Ejemplares similares