Experimental verification of SO(2) and S desorption contributing to defect formation in MoS(2) by thermal desorption spectroscopy

The defect-free surface of MoS(2) is of high importance for applications in electronic devices. Theoretical calculations have predicted that oxidative etching could be responsible for sulfur vacancy formation. No direct experimental evidence, however, points out the role of adsorbed oxygen on sulfur...

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Detalles Bibliográficos
Autores principales: Li, Shuhong, Nishimura, Tomonori, Maruyama, Mina, Okada, Susumu, Nagashio, Kosuke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9846482/
https://www.ncbi.nlm.nih.gov/pubmed/36756254
http://dx.doi.org/10.1039/d2na00636g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9846482/
https://www.ncbi.nlm.nih.gov/pubmed/36756254
http://dx.doi.org/10.1039/d2na00636g

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