Cargando…
Experimental verification of SO(2) and S desorption contributing to defect formation in MoS(2) by thermal desorption spectroscopy
The defect-free surface of MoS(2) is of high importance for applications in electronic devices. Theoretical calculations have predicted that oxidative etching could be responsible for sulfur vacancy formation. No direct experimental evidence, however, points out the role of adsorbed oxygen on sulfur...
Autores principales: | , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
RSC
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9846482/ https://www.ncbi.nlm.nih.gov/pubmed/36756254 http://dx.doi.org/10.1039/d2na00636g |
_version_ | 1784871189600010240 |
---|---|
author | Li, Shuhong Nishimura, Tomonori Maruyama, Mina Okada, Susumu Nagashio, Kosuke |
author_facet | Li, Shuhong Nishimura, Tomonori Maruyama, Mina Okada, Susumu Nagashio, Kosuke |
author_sort | Li, Shuhong |
collection | PubMed |
description | The defect-free surface of MoS(2) is of high importance for applications in electronic devices. Theoretical calculations have predicted that oxidative etching could be responsible for sulfur vacancy formation. No direct experimental evidence, however, points out the role of adsorbed oxygen on sulfur vacancy formation for MoS(2), especially on an insulating SiO(2)/Si substrate. Herein, by applying thermal desorption spectroscopy, we found that sulfur loss can be tightly coupled to adsorbed oxygen, as confirmed by observation of SO(2) desorption. With annealing MoS(2), even under ultrahigh vacuum, oxygen molecules adsorbed on MoS(2) assist the sulfur atom in dissociating from MoS(2), and thus, defects are formed as the result of SO(2) desorption from 200 °C to 600 °C. At higher temperatures (over 800 °C), on the other hand, direct sulfur desorption becomes dominant. This finding can be well explained by combining the morphology investigation enabled by atomic layer deposition at defective sites and optical transitions observed by photoluminescence measurements. Moreover, a preannealing treatment prior to exfoliation was found to be an effective method to remove the adsorbed oxygen, thus preventing defect formation. |
format | Online Article Text |
id | pubmed-9846482 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | RSC |
record_format | MEDLINE/PubMed |
spelling | pubmed-98464822023-02-07 Experimental verification of SO(2) and S desorption contributing to defect formation in MoS(2) by thermal desorption spectroscopy Li, Shuhong Nishimura, Tomonori Maruyama, Mina Okada, Susumu Nagashio, Kosuke Nanoscale Adv Chemistry The defect-free surface of MoS(2) is of high importance for applications in electronic devices. Theoretical calculations have predicted that oxidative etching could be responsible for sulfur vacancy formation. No direct experimental evidence, however, points out the role of adsorbed oxygen on sulfur vacancy formation for MoS(2), especially on an insulating SiO(2)/Si substrate. Herein, by applying thermal desorption spectroscopy, we found that sulfur loss can be tightly coupled to adsorbed oxygen, as confirmed by observation of SO(2) desorption. With annealing MoS(2), even under ultrahigh vacuum, oxygen molecules adsorbed on MoS(2) assist the sulfur atom in dissociating from MoS(2), and thus, defects are formed as the result of SO(2) desorption from 200 °C to 600 °C. At higher temperatures (over 800 °C), on the other hand, direct sulfur desorption becomes dominant. This finding can be well explained by combining the morphology investigation enabled by atomic layer deposition at defective sites and optical transitions observed by photoluminescence measurements. Moreover, a preannealing treatment prior to exfoliation was found to be an effective method to remove the adsorbed oxygen, thus preventing defect formation. RSC 2022-11-28 /pmc/articles/PMC9846482/ /pubmed/36756254 http://dx.doi.org/10.1039/d2na00636g Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/ |
spellingShingle | Chemistry Li, Shuhong Nishimura, Tomonori Maruyama, Mina Okada, Susumu Nagashio, Kosuke Experimental verification of SO(2) and S desorption contributing to defect formation in MoS(2) by thermal desorption spectroscopy |
title | Experimental verification of SO(2) and S desorption contributing to defect formation in MoS(2) by thermal desorption spectroscopy |
title_full | Experimental verification of SO(2) and S desorption contributing to defect formation in MoS(2) by thermal desorption spectroscopy |
title_fullStr | Experimental verification of SO(2) and S desorption contributing to defect formation in MoS(2) by thermal desorption spectroscopy |
title_full_unstemmed | Experimental verification of SO(2) and S desorption contributing to defect formation in MoS(2) by thermal desorption spectroscopy |
title_short | Experimental verification of SO(2) and S desorption contributing to defect formation in MoS(2) by thermal desorption spectroscopy |
title_sort | experimental verification of so(2) and s desorption contributing to defect formation in mos(2) by thermal desorption spectroscopy |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9846482/ https://www.ncbi.nlm.nih.gov/pubmed/36756254 http://dx.doi.org/10.1039/d2na00636g |
work_keys_str_mv | AT lishuhong experimentalverificationofso2andsdesorptioncontributingtodefectformationinmos2bythermaldesorptionspectroscopy AT nishimuratomonori experimentalverificationofso2andsdesorptioncontributingtodefectformationinmos2bythermaldesorptionspectroscopy AT maruyamamina experimentalverificationofso2andsdesorptioncontributingtodefectformationinmos2bythermaldesorptionspectroscopy AT okadasusumu experimentalverificationofso2andsdesorptioncontributingtodefectformationinmos2bythermaldesorptionspectroscopy AT nagashiokosuke experimentalverificationofso2andsdesorptioncontributingtodefectformationinmos2bythermaldesorptionspectroscopy |