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Experimental verification of SO(2) and S desorption contributing to defect formation in MoS(2) by thermal desorption spectroscopy
The defect-free surface of MoS(2) is of high importance for applications in electronic devices. Theoretical calculations have predicted that oxidative etching could be responsible for sulfur vacancy formation. No direct experimental evidence, however, points out the role of adsorbed oxygen on sulfur...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9846482/ https://www.ncbi.nlm.nih.gov/pubmed/36756254 http://dx.doi.org/10.1039/d2na00636g |