Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction

The tunnelling electric current passing through a magnetic tunnel junction (MTJ) is strongly dependent on the relative orientation of magnetizations in ferromagnetic electrodes sandwiching an insulating barrier, rendering efficient readout of spintronics devices(1–5). Thus, tunnelling magnetoresista...

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Detalles Bibliográficos
Autores principales: Chen, Xianzhe, Higo, Tomoya, Tanaka, Katsuhiro, Nomoto, Takuya, Tsai, Hanshen, Idzuchi, Hiroshi, Shiga, Masanobu, Sakamoto, Shoya, Ando, Ryoya, Kosaki, Hidetoshi, Matsuo, Takumi, Nishio-Hamane, Daisuke, Arita, Ryotaro, Miwa, Shinji, Nakatsuji, Satoru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9849134/
https://www.ncbi.nlm.nih.gov/pubmed/36653566
http://dx.doi.org/10.1038/s41586-022-05463-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9849134/
https://www.ncbi.nlm.nih.gov/pubmed/36653566
http://dx.doi.org/10.1038/s41586-022-05463-w

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