GaN JBS Diode Device Performance Prediction Method Based on Neural Network

GaN JBS diodes exhibit excellent performance in power electronics. However, device performance is affected by multiple parameters of the P+ region, and the traditional TCAD simulation method is complex and time-consuming. In this study, we used a neural network machine learning method to predict the...

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Detalles Bibliográficos
Autores principales: Ma, Hao, Duan, Xiaoling, Wang, Shulong, Liu, Shijie, Zhang, Jincheng, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9860762/
https://www.ncbi.nlm.nih.gov/pubmed/36677249
http://dx.doi.org/10.3390/mi14010188

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9860762/
https://www.ncbi.nlm.nih.gov/pubmed/36677249
http://dx.doi.org/10.3390/mi14010188

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