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GaN JBS Diode Device Performance Prediction Method Based on Neural Network
GaN JBS diodes exhibit excellent performance in power electronics. However, device performance is affected by multiple parameters of the P+ region, and the traditional TCAD simulation method is complex and time-consuming. In this study, we used a neural network machine learning method to predict the...
Autores principales: | Ma, Hao, Duan, Xiaoling, Wang, Shulong, Liu, Shijie, Zhang, Jincheng, Hao, Yue |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9860762/ https://www.ncbi.nlm.nih.gov/pubmed/36677249 http://dx.doi.org/10.3390/mi14010188 |
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