Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash

The bit density is generally increased by stacking more layers in 3D NAND Flash. Lowering dopant activation of select transistors results from complex integrated processes. To improve channel dopant activation, the test structure of vertical channel transistors was used to investigate the influence...

Descripción completa

Detalles Bibliográficos
Autores principales: Yang, Tao, Xia, Zhiliang, Fan, Dongyu, Zhao, Dongxue, Xie, Wei, Yang, Yuancheng, Liu, Lei, Zhou, Wenxi, Huo, Zongliang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9861129/
https://www.ncbi.nlm.nih.gov/pubmed/36677291
http://dx.doi.org/10.3390/mi14010230

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9861129/
https://www.ncbi.nlm.nih.gov/pubmed/36677291
http://dx.doi.org/10.3390/mi14010230

Ejemplares similares