Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation

GaN-based Micro-LED has been widely regarded as the most promising candidate for next generation of revolutionary display technology due to its advantages of high efficiency, high brightness and high stability. However, the typical micro-fabrication process would leave a great number of damages on t...

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Detalles Bibliográficos
Autores principales: Zhu, Zhifang, Tao, Tao, Liu, Bin, Zhi, Ting, Chen, Yang, Yu, Junchi, Jiang, Di, Xu, Feifan, Sang, Yimeng, Yan, Yu, Xie, Zili, Zhang, Rong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9861329/
https://www.ncbi.nlm.nih.gov/pubmed/36677072
http://dx.doi.org/10.3390/mi14010010

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9861329/
https://www.ncbi.nlm.nih.gov/pubmed/36677072
http://dx.doi.org/10.3390/mi14010010

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