Cargando…

Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation

GaN-based Micro-LED has been widely regarded as the most promising candidate for next generation of revolutionary display technology due to its advantages of high efficiency, high brightness and high stability. However, the typical micro-fabrication process would leave a great number of damages on t...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zhu, Zhifang, Tao, Tao, Liu, Bin, Zhi, Ting, Chen, Yang, Yu, Junchi, Jiang, Di, Xu, Feifan, Sang, Yimeng, Yan, Yu, Xie, Zili, Zhang, Rong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9861329/ https://www.ncbi.nlm.nih.gov/pubmed/36677072 http://dx.doi.org/10.3390/mi14010010

Ejemplares similares

Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED
por: Park, Juhyuk, et al.
Publicado: (2022)

Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs
por: Huang, Wenjun, et al.
Publicado: (2023)

Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure
por: Xu, Liang, et al.
Publicado: (2021)

Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs
por: Zhang, Ke, et al.
Publicado: (2020)

InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings
por: Deng, Zejia, et al.
Publicado: (2019)

Recent Advances on GaN-Based Micro-LEDs
por: Zhang, Youwei, et al.
Publicado: (2023)

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED
por: Jeong, Hyun, et al.
Publicado: (2015)

Optimization of Ternary In(x)Ga(1-x)N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs
por: Lin, Yu-Chung, et al.
Publicado: (2023)

Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes
por: Wan, Hui, et al.
Publicado: (2019)

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing
por: Lai, Fang-I, et al.
Publicado: (2013)

Implantation doping and hydrogen passivation of GaN
por: Burchard, A, et al.
Publicado: (1997)

3.5 × 3.5 μm(2) GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination
por: Wang, Xuelun, et al.
Publicado: (2023)

Power-Dependent Optical Characterization of the InGaN/GaN-Based Micro-Light-Emitting-Diode (LED) in High Spatial Resolution
por: Yang, Haifeng, et al.
Publicado: (2023)

Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H(3)PO(4)-Based Etchant
por: Hsu, Wen-Yang, et al.
Publicado: (2018)

Precise Temperature Mapping of GaN-Based LEDs by Quantitative Infrared Micro-Thermography
por: Chang, Ki Soo, et al.
Publicado: (2012)

Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization
por: Bezshlyakh, Daria D., et al.
Publicado: (2020)

The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
por: Jiao, Qianqian, et al.
Publicado: (2016)

Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor
por: Esendag, Volkan, et al.
Publicado: (2022)

Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization
por: Tao, Tao, et al.
Publicado: (2016)

High Modulation Bandwidth of Semipolar (11–22) InGaN/GaN LEDs with Long Wavelength Emission
por: Haggar, Jack IH., et al.
Publicado: (2020)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
por: Wang, Haiping, et al.
Publicado: (2022)

Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light
por: Chiang, Yen Chih, et al.
Publicado: (2015)

White-Light GaN-μLEDs Employing Green/Red Perovskite Quantum Dots as Color Converters for Visible Light Communication
por: Liu, Xiaoyan, et al.
Publicado: (2022)

Rapid AC Electrokinetic Micromixer with Electrically Conductive Sidewalls
por: Yang, Fang, et al.
Publicado: (2021)

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
por: Shih, Huan-Yu, et al.
Publicado: (2015)

Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN
por: Zhang, Yuheng, et al.
Publicado: (2020)

Graphene as a Transparent Conductive Electrode in GaN-Based LEDs
por: Zhang, Hehe, et al.
Publicado: (2022)

Nanoscale Characterization of V-Defect in InGaN/GaN QWs LEDs Using Near-Field Scanning Optical Microscopy
por: Li, Yufeng, et al.
Publicado: (2019)

Progress and Challenges of InGaN/GaN-Based Core–Shell Microrod LEDs
por: Meier, Johanna, et al.
Publicado: (2022)

The Electrical and Thermal Characteristics of Stacked GaN MISHEMT
por: Hui, Caixin, et al.
Publicado: (2022)

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
por: Jorudas, Justinas, et al.
Publicado: (2020)

Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography
por: Wang, Sheng-Wen, et al.
Publicado: (2017)

Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall
por: Tang, Bin, et al.
Publicado: (2019)

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots
por: Huang, Yu-Ming, et al.
Publicado: (2021)

Improvement of photon extraction efficiency of GaN-based LED using micro and nano complex polymer structures
por: Cho, Joong-Yeon, et al.
Publicado: (2011)

Study on Modulation Bandwidth of GaN-Based Micro-Light-Emitting Diodes by Adjusting Quantum Well Structure
por: Yin, Pan, et al.
Publicado: (2022)

GaN-based mini-LED matrix applied to multi-functional forward lighting
por: Nguyen, Quang-Khoi, et al.
Publicado: (2022)

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors
por: Lin, Yu-Shyan, et al.
Publicado: (2020)

GaN-Based Ultraviolet Passive Pixel Sensor on Silicon (111) Substrate
por: Lee, Chang-Ju, et al.
Publicado: (2019)

Structural and optical analyses for InGaN-based red micro-LED
por: Hsiao, Fu-He, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_k8qj698ekmpk1bu44e0i66mvim