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Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers

The measurements of wafers’ surface profile are crucial for safeguarding the fabrication quality of integrated circuits and MEMS devices. The current techniques measure the profile mainly by moving a capacitive or optical spacing sensing probe along multiple lines, which is high-cost and inefficient...

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Detalles Bibliográficos
Autores principales: Zheng, Panpan, Cai, Bingyang, Zhu, Tao, Yu, Li, Wu, Wenjie, Tu, Liangcheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863230/
https://www.ncbi.nlm.nih.gov/pubmed/36677183
http://dx.doi.org/10.3390/mi14010122
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author Zheng, Panpan
Cai, Bingyang
Zhu, Tao
Yu, Li
Wu, Wenjie
Tu, Liangcheng
author_facet Zheng, Panpan
Cai, Bingyang
Zhu, Tao
Yu, Li
Wu, Wenjie
Tu, Liangcheng
author_sort Zheng, Panpan
collection PubMed
description The measurements of wafers’ surface profile are crucial for safeguarding the fabrication quality of integrated circuits and MEMS devices. The current techniques measure the profile mainly by moving a capacitive or optical spacing sensing probe along multiple lines, which is high-cost and inefficient. This paper presents the calculation, simulation and experiment of a method for measuring the surface profile with arrayed capacitive spacing transducers. The calculation agreed well with the simulation and experiment. Finally, the proposed method was utilized for measuring the profile of a silicon wafer. The result is consistent with that measured by a commercial instrument. As a movement system is not required, the proposed method is promising for industry applications with superior cost and efficiency to the existing technology.
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spelling pubmed-98632302023-01-22 Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers Zheng, Panpan Cai, Bingyang Zhu, Tao Yu, Li Wu, Wenjie Tu, Liangcheng Micromachines (Basel) Article The measurements of wafers’ surface profile are crucial for safeguarding the fabrication quality of integrated circuits and MEMS devices. The current techniques measure the profile mainly by moving a capacitive or optical spacing sensing probe along multiple lines, which is high-cost and inefficient. This paper presents the calculation, simulation and experiment of a method for measuring the surface profile with arrayed capacitive spacing transducers. The calculation agreed well with the simulation and experiment. Finally, the proposed method was utilized for measuring the profile of a silicon wafer. The result is consistent with that measured by a commercial instrument. As a movement system is not required, the proposed method is promising for industry applications with superior cost and efficiency to the existing technology. MDPI 2022-12-31 /pmc/articles/PMC9863230/ /pubmed/36677183 http://dx.doi.org/10.3390/mi14010122 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zheng, Panpan
Cai, Bingyang
Zhu, Tao
Yu, Li
Wu, Wenjie
Tu, Liangcheng
Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers
title Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers
title_full Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers
title_fullStr Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers
title_full_unstemmed Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers
title_short Multi-Grid Capacitive Transducers for Measuring the Surface Profile of Silicon Wafers
title_sort multi-grid capacitive transducers for measuring the surface profile of silicon wafers
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863230/
https://www.ncbi.nlm.nih.gov/pubmed/36677183
http://dx.doi.org/10.3390/mi14010122
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