A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications

A 1.4-dB Noise Figure (NF) four-stage K-band Monolithic Microwave Integrated Circuit (MMIC) Low-Noise Amplifier (LNA) in UMS 100 nm GaAs pHEMT technology is presented. The proposed circuit is designed to cover the 5G New Release n258 frequency band (24.25–27.58 GHz). Momentum EM post-layout simulati...

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Detalles Bibliográficos
Autores principales: Galante-Sempere, David, Khemchandani, Sunil Lalchand, del Pino, Javier
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863545/
https://www.ncbi.nlm.nih.gov/pubmed/36679663
http://dx.doi.org/10.3390/s23020867

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863545/
https://www.ncbi.nlm.nih.gov/pubmed/36679663
http://dx.doi.org/10.3390/s23020867

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