Focus on the Avalanche Breakdown Characteristic of Si- and InP-Based APDs Irradiated by Fast Neutrons

The Si- and InP-based APDs as the most important weak light semiconductor photodetectors to have achieved commercial success and are widely used in irradiation environments. Investigating the influencing mechanism of neutron irradiation on the above two types of APDs is of scientific and practical i...

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Detalles Bibliográficos
Autores principales: Kang, Jianbin, Li, Qian, Fu, Xiang, Chen, Feiliang, Li, Mo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863663/
https://www.ncbi.nlm.nih.gov/pubmed/36677149
http://dx.doi.org/10.3390/mi14010086

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9863663/
https://www.ncbi.nlm.nih.gov/pubmed/36677149
http://dx.doi.org/10.3390/mi14010086

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