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Interaction Energy Dependency on Pulse Width in ns NIR Laser Scanning of Silicon
Laser ablation of semiconductor silicon has been extensively studied in the past few decades. In the ultrashort pulse domain, whether in the fs scale or ps scale, the pulse energy fluence threshold in the ablation of silicon is strongly dependent on the pulse width. However, in the ns pulse scale, t...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9865056/ https://www.ncbi.nlm.nih.gov/pubmed/36677178 http://dx.doi.org/10.3390/mi14010119 |