GaN Vertical Transistors with Staircase Channels for High-Voltage Applications

In this study, we propose and simulate the design of a non-regrowth staircase channel GaN vertical trench transistor, demonstrating an exceptional threshold and breakdown characteristic for high power and high frequency applications. The unique staircase design provides a variable capacitance throug...

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Detalles Bibliográficos
Autores principales: Barman, Kuntal, Lin, Dai-Jie, Gupta, Rohit, Chang, Chih-Kang, Huang, Jian-Jang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9865230/
https://www.ncbi.nlm.nih.gov/pubmed/36676318
http://dx.doi.org/10.3390/ma16020582

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9865230/
https://www.ncbi.nlm.nih.gov/pubmed/36676318
http://dx.doi.org/10.3390/ma16020582

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